Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method

Eiji HIGURASHI; Ken OKUMURA; Yutaka KUNIMUNE; Tadatomo SUGA; Kei HAGIWARA

doi:10.1587/transele.E100.C.156

Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices

Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method

Eiji HIGURASHI, Ken OKUMURA, Yutaka KUNIMUNE, Tadatomo SUGA, Kei HAGIWARA

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Keywords: heterogeneous integration, room-temperature bonding, surface-activated bonding, Au-Au bonding

JOURNAL FREE ACCESS

2017 Volume E100.C Issue 2 Pages 156-160

DOI https://doi.org/10.1587/transele.E100.C.156

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Abstract

Wafers with smooth Au thin films (rms surface roughness: < 0.5nm, thickness: < 50nm) were successfully bonded in ambient air at room temperature after an Ar radio frequency plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47-70MPa. Transmission electron microscopy observations showed that direct bonding on the atomic scale was achieved. This surface-activated bonding method is expected to be a useful technique for future heterogeneous photonic integration.

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