2017 Volume E100.C Issue 2 Pages 161-165
Crystalline GaN films can be grown even on amorphous substrates with the use of graphene buffer layers by pulsed sputtering deposition (PSD). The graphene buffer layers allowed us to grow highly c-axis-oriented GaN films at low substrate temperatures. Full-color GaN-based LEDs can be fabricated on the GaN/graphene structures and they are operated successfully. This indicates that the present technique is promising for future large-area light-emitting displays on amorphous substrates.