IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices
GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices
Jitsuo OHTAJeong Woo SHONKohei UENOAtsushi KOBAYASHIHiroshi FUJIOKA
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2017 Volume E100.C Issue 2 Pages 161-165

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Abstract

Crystalline GaN films can be grown even on amorphous substrates with the use of graphene buffer layers by pulsed sputtering deposition (PSD). The graphene buffer layers allowed us to grow highly c-axis-oriented GaN films at low substrate temperatures. Full-color GaN-based LEDs can be fabricated on the GaN/graphene structures and they are operated successfully. This indicates that the present technique is promising for future large-area light-emitting displays on amorphous substrates.

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© 2017 The Institute of Electronics, Information and Communication Engineers
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