Measuring SET Pulse Widths in pMOSFETs and nMOSFETs Separately by Heavy Ion and Neutron Irradiation

Abstract

Radiation-induced temporal errors become a significant issue for circuit reliability. We measured the pulse widths of radiation-induced single event transients (SETs) from pMOSFETs and nMOSFETs separately. Test results show that heavy-ion induced SET rates of nMOSFETs were twice as high as those of pMOSFETs and that neutron-induced SETs occurred only in nMOSFETs. It was confirmed that the SET distribution from inverter chains can be estimated using the SET distribution from pMOSFETs and nMOSFETs by considering the difference in load capacitance of the measurement circuits.