Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers

Hyun Woo KIM; Dong Hun KIM; Joo Hyung YOU; Tae Whan KIM

doi:10.1587/transele.E93.C.651

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al₂O₃ and SiO₂ Stacked Tunneling Layers

Hyun Woo KIM, Dong Hun KIM, Joo Hyung YOU, Tae Whan KIM

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Keywords: SANOS, SONOS, charge transport, silicon nitride, stacked tunneling layer

JOURNAL RESTRICTED ACCESS

2010 Volume E93.C Issue 5 Pages 651-653

DOI https://doi.org/10.1587/transele.E93.C.651

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Abstract

The programming characteristics of polysilicon-aluminum oxide-nitride-oxide-silicon (SANOS) nonvolatile memory devices with Al₂O₃ and SiO₂ stacked tunneling layers were investigated. The electron and hole drifts in the Si₃N₄ layer were calculated to determine the program speed of the proposed SANOS devices. Simulation results showed that enhancement of the programming speed in SANOS was achieved by utilizing SiO₂ and Al₂O₃ stacked tunneling layers.

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