IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
A 180-µW, 120-MHz, Fourth Order Low-Pass Bessel Filter Based on FVF Biquad Structure
Hundo SHINSeung-Tak RYU
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ジャーナル 認証あり

2012 年 E95.C 巻 5 号 p. 949-957

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抄録
This paper proposes a new biquad structure based on a flipped voltage follower (FVF) for low-power and wide-bandwidth (BW) low pass filter. The proposed biquad structure consists of an FVF and a source follower (SF) for complex pole pair generation and zero cancellation. The presented design provides good linearity at low power consumption, owing to the voltage follower structures. A power/BW ratio (PBWR) is suggested as a performance metric to compare power efficiency to bandwidth, and the proposed biquad structure shows excellent PBWR, especially for low quality factor (Q) design. As a prototype, a fourth order Bessel filter was fabricated in 0.18µm CMOS technology. The measured BW, power consumption, IIP3, and FoM are 120MHz, 180µW, 15dBm, and 0.34fJ, respectively.
著者関連情報
© 2012 The Institute of Electronics, Information and Communication Engineers
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