Abstract
A 315MHz power-gated ultra low power transceiver for wireless sensor network is developed in 40nm CMOS. The developed transceiver features an injection-locked frequency multiplier for carrier generation and a power-gated low noise amplifier with current second-reuse technique for receiver front-end. The injection-locked frequency multiplier implements frequency multiplication by edge-combining and thereby achieves 11µW power consumption at 315MHz. The proposed low noise amplifier achieves the lowest power consumption of 8.4µW with 7.9dB noise figure and 20.5dB gain in state-of-the-art designs.
