Independent-Double-Gate FinFET SRAM Technology

Kazuhiko ENDO; Shin-ichi OUCHI; Takashi MATSUKAWA; Yongxun LIU; Meishoku MASAHARA

doi:10.1587/transele.E96.C.413

Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology

Independent-Double-Gate FinFET SRAM Technology

Kazuhiko ENDO, Shin-ichi OUCHI, Takashi MATSUKAWA, Yongxun LIU, Meishoku MASAHARA

著者情報

キーワード: multi-gate devices, FinFET, SRAM, noise margin

ジャーナル認証あり

2013 年 E96.C 巻 4 号 p. 413-423

DOI https://doi.org/10.1587/transele.E96.C.413

詳細

抄録

Multi-Gate device technology is the promising candidate for the enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to achieve flexible V_th adjustment. It is revealed that the SRAM noise margins have been increased by introducing the independent-double-gate FinFET.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）