Vacuum and Surface Science
Online ISSN : 2433-5843
Print ISSN : 2433-5835
Special Issue : Frontier in Nanoscale Three-Dimensional Analysis
Three-Dimensional Analysis using Focused Ion Beam and Electron Microscope
Jun KATO
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2018 Volume 61 Issue 12 Pages 772-777

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Abstract

Recently, latest semiconductor devices have three-dimensional (3D) structure and nanostructured materials have 3D distribution of its components. Therefore, 3D analysis methods are required. In this report, some cases that were analyzed using serial sectioning method and TEM tomography method are introduced.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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