表面と真空
Online ISSN : 2433-5843
Print ISSN : 2433-5835
特集「プラズマが誘起する界面反応と表面科学」
プラズマを用いたシリコン原子層エッチングにおける表面反応
唐橋 一浩浜口 智志
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2020 年 63 巻 12 号 p. 616-622

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As feature sizes of semiconductor devices diminish to the atomic scale, their fabrication also requires an atomic-scale accuracy. Atomic layer etching (ALE) is a dry etching process having an atomic-scale resolution. In ALE, a thin layer of a material surface is removed sequentially by a cycle of two reaction steps, i.e., the formation step of surface modification and the removal step of a surface layer affected by the surface modification. In plasma-assisted ALE (PA-ALE), plasmas are used to generate reactive species that modify the surface and/or low-energy ions that assist the removal of the modified surface layer. In this review article, the interactions of halogen atoms and hyper-thermal halogen molecules with a silicon (Si) surface are discussed, which correspond to typical surface reactions in the formation step of PA-ALE of Si. Similarly, the interactions of halogenated Si surfaces with low-energy inert-gas incident ions are also examined as typical surface reactions of the removal step of PA-ALE of Si.

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この記事はクリエイティブ・コモンズ [表示 - 非営利 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by-nc/4.0/deed.ja
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