デバイス用基板上SiC単結晶薄膜を用いた超高品質グラフェンと高周波デバイスの廉価な製造法の創出

抄録

Graphene is promising for beyond 5G applications with a low environmental load. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers ; it is difficult to do so while balancing both quality and affordability. We propose a new method for the growth of high-quality FLG on a new template named “hybrid SiC”. The hybrid SiC is produced by bonding a SiC bulk crystal with an affordable device-type wafer and subsequently peeling off the SiC bulk crystal to obtain a single-crystalline SiC thin film on the wafer. The quality of FLG on this hybrid SiC is comparable to that of FLG on SiC bulk crystals. FLG on the hybrid SiC exhibited high carrier mobilities, comparable to those on SiC bulk crystals. Transistors using FLG on the hybrid SiC showed the potential to operate in terahertz frequencies. The proposed method is suited for growing high-quality FLG on desired substrates with the aim of realizing society 5.0 for sustainable development goals.