e-Journal of Surface Science and Nanotechnology
Online ISSN : 1348-0391
ISSN-L : 1348-0391
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Showing 1-5 articles out of 5 articles from the selected issue
Regular Papers
  • Afif Hamzens, Ridho Kurniawan, Damar Rastri Adhika, Widayani, Ahmad ...
    Type: Regular Paper
    Subject area: Nano-Materials
    2021 Volume 19 Pages 1-8
    Published: February 27, 2021
    Released: February 27, 2021
    JOURNALS OPEN ACCESS

    A near-infrared (NIR) reflector in cotton clothes may prevents several dermatological problems. TiO2 is commonly used for the NIR reflector coating in cotton. The NIR reflectance value is expected to increase if smaller TiO2 particles were used. A simple mechanical process of ultrasonic wet-milling to reduce the TiO2 particle size is proposed in this study. The reduction process utilizes ultrasonic cavitation by an ultrasonic homogenizer has succeeded in reducing the particle size from 170 to 80 nm as indicated by particle size measurement results and as supported by transmission electron microscopy results. The wet-milling particles of 80 nm TiO2, along with 170 and 280 nm TiO2, were used to coat cotton fabrics. Optimization of the coating process was performed using citric acid and chitosan as binder agents. The effect of citric acid and chitosan was studied through NIR spectroscopy, scanning electron microscopy, and X-ray fluorescence. From the NIR spectroscopy characterization results, it is found that the fabrics which are coated with the smallest TiO2 particle size (80 nm) indeed show highest NIR reflectance among others.

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  • Atabek E. Atamuratov, Mahkam M. Khalilloev, Ahmed Yusupov, Jean Chambe ...
    Type: Regular Paper
    Subject area: Devices and Sensors
    2021 Volume 19 Pages 9-12
    Published: March 04, 2021
    Released: March 04, 2021
    JOURNALS OPEN ACCESS

    The influence of the channel shape in a junctionless silicon- on-insulator finned field-effect transistor (JL SOI FinFET) on the amplitude of random telegraph noise (RTN) induced by single interface trapped charge has been simulated for the transistors with rectangular, trapezoidal, and triangular fin cross sections. The simulation of the RTN amplitude distribution along the channel induced by a single charge trapped at interface defect located at the fin top and at sidewall of JL SOI FinFETs with channels of different shapes is considered. It is established that at trapping the single charge at sidewall surface of the channel, the lowest RTN amplitude is seen for the triangular cross-section and the highest for the rectangular and trapezoidal cross-sections. At the single charge trapping at the top surface of the channel, the RTN amplitude is higher for the rectangle than for the trapezoidal cross-section.

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  • Sohei Nakatsuka, Taishi Imaizumi, Tadashi Abukawa, Azusa N. Hattori, H ...
    Type: Regular Paper
    Subject area: Micro- and Nano-Fabrication
    2021 Volume 19 Pages 13-19
    Published: March 06, 2021
    Released: March 06, 2021
    JOURNALS OPEN ACCESS

    Spatially arranged surfaces on the micro-rod structure, which was three-dimensionally (3D) architected on a Si(110) substrate have been thoroughly investigated by a system with micro-beam reflection high-energy electron diffraction (μ-RHEED) and scanning electron microscopy (SEM). The combination of μ-RHEED and SEM realized analytical structure investigation of 3D surfaces with the spatial resolution of sub micrometer for the 3D rectangular shaped rod consisting of a (110) top surface (20 μm wide) and {111} vertical side surfaces (10 μm wide). Exhaustive mapping revealed the peculiar reconstructed surface structures: Si(110) “16 × 2” single domain and {35 47 7} facet surfaces locally appeared on the interconnected edge region on the 3D structure in addition to the “16 × 2” and 7 × 7 super structures on flat top (110) and side {111} surfaces, respectively. The formation mechanism for “16 × 2” single-domain structure near the corner edge of the (110) surfaces and {35 47 7} facets on the corner edges between (110) and {111} surfaces were discussed from the viewpoint of the surface stability on the 3D geometrical shaped Si structure.

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  • M. Okawa, K. Akikubo, S. Yamamoto, I. Matsuda, T. Saitoh
    Type: Regular Paper
    Subject area: Electronic Properties
    2021 Volume 19 Pages 20-23
    Published: March 18, 2021
    Released: March 18, 2021
    JOURNALS OPEN ACCESS

    Temporal variations of valence states of the α-YbAl1−xFexB4 crystals (x = 0, 0.013, and 0.098) are experimentally examined in a nanosecond time-scale by time-resolved photoemission experiments using synchrotron radiation. The Yb 4f spectral features show no apparent change with time during relaxations after the optical pumping. The present experimental result indicates that dynamics of valence fluctuations in the material are likely dominated by a picosecond or much faster time-scale. The time-resolved measurement at the time-resolution limit at synchrotron radiation captured the trace of valence fluctuations.

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  • Zeyang Xue, Yajing Mao, Chunhu Yu, Mingchang Wang, Chuangang Fan, Lizh ...
    Type: Regular Paper
    Subject area: Catalysis
    2021 Volume 19 Pages 24-31
    Published: April 03, 2021
    Released: April 03, 2021
    JOURNALS OPEN ACCESS

    Bismuth oxide/indium oxide microspheres have been synthesized by a facile ethylenediaminetetraacetic acid (EDTA)-assisted hydrothermal process using sodium bismuthate and indium nitrate as raw materials. The obtained products were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and solid ultraviolet-visible diffusion reflectance spectroscopy. XRD and SEM observations show that the obtained microspheres consist of tetragonal Bi2O3 and cubic In2O3 phases with a smooth surface and diameters between 150 nm and 1 μm. EDTA, hydrothermal temperature, and reaction time play essential roles in the formation of the bismuth oxide/indium oxide microspheres. The tetragonal Bi2O3 and cubic In2O3 phases are formed with increasing the hydrothermal temperature and the reaction time. Photocatalytic performance of the bismuth oxide/indium oxide microspheres was evaluated by photocatalytic degradation of rhodamine B in an aqueous solution with solar light irradiation. A rhodamine B degradation ratio depends on the solar light irradiation time and the microspheres dosage. Rhodamine B with 10 mg L−1 can be entirely removed by more than 10 mg of the bismuth oxide/indium oxide microspheres in the 10 mL aqueous solution under solar light irradiation for 6 h.

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