The processes of build-up and decay of the persistent internal polarization (PIP) of anthracene crystals were experimentally studied. The 1st singlet exciton band absorption (350∼400 mμ) was used for the photogeneration of charge carriers.
The crystals used were very pure ones of the form of a plate about 1 mm thick with ab-crystallographic plane surfaces. The polarization of the crystal sandwiched between transparent and metal electrodes was built up by repetition of pulse illuminations with constant intensity in one case without field and in another with 2000 dc. V/cm field. The produced polarization was determined by observing the depolarization current (light pulse probing method) or the released charge (radiation release method).
The hole-injection-type PIP and the electron-injection-type PIP were built up by making the polarity in the electrode positive and negative on the illuminated side, respectively. The zero-field-built-up PIP was of the hole-injection-type.
The results were examined mainly from the viewpoint of photogeneration of charge carriers.
The growth rate of hole-injection-type PIP is always larger than that of the electron-injection-type. The former can be made very large by the pre-treatment of the surface, that is, the ultraviolet irradiation in the presence of oxygen. The surface oxidation causes the density of surface acceptors to increase where the singlet excitons dissociate so that the conductive holes are generated, the electrons being trapped inthe acceptors. The decay rate of the electron-injection-type PIP due to the radiation release depends on the surface conditions.
The growth rate of the electron-injection-type PIP and the decay rate of the hole injection-type PIP are independent of the surface conditions and are in proportion to the square of light intensity. This is to be explained by assuming that the electron-hole pairs are generated through the exciton-exciton interaction.
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