The crystal structure and magnetic properties of D0₂₂-Mn₃Ge thin films with a high perpendicular magnetic anisotropy constant (K_u) and a low magnetization (M_s) were investigated. D0₂₂-Mn₃Ge thin films were grown on the single crystal of MgO (100) substrates with Cr buffer layer using alternate sputtering method. The Mn_xGe thin films were prepared as [Mn_x/Ge]_n multilayers (2.8 ≤ x ≤ 3.7) (1 ≤ n ≤ 30). We tried to fabricate D0₂₂-Mn₃Ge that shows a high K_u value of over 1.0×10⁷ erg/cm³ and a low M_s value of approximately 100 emu/cm³ by the modulation of composition between Mn layer and Ge layer. As a result, D0₂₂-Mn₃Ge thin film with a high perpendicular magnetic anisotropy constant (K_u ~ ca. 1.0×10⁷ erg/cm³), a low saturation magnetization (M_s = 119 emu/cm³) and good squareness from [Mn_3.5/Ge]₁₅ (T_s = 450ºC, T_a = 500ºC) multilayered film was obtained. Almost same magnetic properties were observed for the films of at n = 20, 25 without post annealing compared with the film annealed at T_a = 500ºC. It is confirmed that increase of the repetition number n by the alternate sputtering method has a same effect of post annealing at 500ºC.