Surface segregation of Sn, In and Bi in high purity aluminum annealed at various temperatures ranging from 423 K to 723 K for 72 ks was studied by Rutherford back scattering spectroscopy(RBS)and transmission electron microscopy(TEM). The strongest segregation was observed in Al containing Sn, In and Bi annealed at 523 K, 623 K and 723 K, respectively. Concentrated positions were different depending on elements; Sn and Bi were at the interface between aluminum oxide and matrix, but In was in aluminum oxide. The empirical rule for degree of surface segregation(surface segregation composition/foil composition)was roughly depending on the inverse of solid solubility, i.e., stronger segregation occurred in less solubility element.
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