Cresol formaldehyde novolac resins (Cre/Form) are used as photo-resist materials because they can be applied minutely onto hard silicon wafers, which are used in the process of making integrated semiconductor circuits. Resins with high hardness cannot be applied minutely onto flexible bases, such as polyimide films. To develop flexible novolac resins for photo-resists, bisphenol A (BisA), which has a bulky isopropylidene group, was incorporated into the molecular backbone chain of novolac resins as a phenolic (PhOH) component. Though BisA glutaraldehyde novolac resins (BisA/Glu) was inferior in drawing ability, they were much more flexible than cresol novolac resin. In this study, BisC/Glu, [BisA/BisC]/Glu and BisC/Form novolac resins ((BisC); 2,2-bis(4-hydroxy-3-methylphenyl)propane) were synthesized and investigated in expectation of improvement of the drawing ability. By increasing the crosslinker agent in the feed, it was observed that the dissolving ratio for alkaline aq. solution (DR) decreased with increasing Mw. To prepare cast films, resins meeting the condition of DR below 1100 Å/s and Mw over 1200 were chosen. Cast films of thickness 5 μm onto the polyimides, were prepared by spin-coating, heat-setting and then exposing to developer solution. The flexibility of the obtained resins was evaluated by observation of the bent parts with microscope. BisC/Glu and BisC/Form novolak resins were found to have high flexibility. Especially, BisC/Glu novolac resin exhibited extremely high flexibility comparable to that of BisA/Glu novolak resin. The lithographic performance of the novolac resins, coated with a thickness of 1.5 μm onto the silicon wafers was examined. The residual membrane thickness of BisC/Glu and BisC/Form novolac resins were high (>90%) and the resist pattern could draw up to 4 μm clearly. So, the BisC-type novolac resins were able to improve the drawing ability.
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