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Koichiro Adachi, Masayoshi Fuji, Minoru Takahashi
Session ID: 1G35
Published: 2004
Released on J-STAGE: March 23, 2006
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Akinobu Harada, Osamu Sakurada, Minoru Hashiba
Session ID: 1G36
Published: 2004
Released on J-STAGE: March 23, 2006
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Hiroya Abe, Makio Naito, Yasuo Ito, Daiji Tahara
Session ID: 1G37
Published: 2004
Released on J-STAGE: March 23, 2006
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Zenji Kato, Satoshi Tanaka, Keizo Uematsu
Session ID: 1G38
Published: 2004
Released on J-STAGE: March 23, 2006
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satoshi tanaka, chia pin chiu, yasuhisa togashi, zenji kato, nozomu uc ...
Session ID: 1G39
Published: 2004
Released on J-STAGE: March 23, 2006
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Infrared light microscopy with liquid immersion technique was applied to examine the internal structure of the granules and green compact of ZrO2 nano-powders, whose refractive index is 2.14. Internal structure could be observed clearly even for their high refractive index by this microscopy. Granule deformation is directly observed with this method for green compacts made at various pressures.
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Mikinori HOTTA, Junichi TATAMI, Katsutoshi KOMEYA, Takeshi MEGURO, Yi- ...
Session ID: 1H06
Published: 2004
Released on J-STAGE: March 23, 2006
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Hien Tran Thi Thu, Chanel Ishizaki, Kozo Ishizaki
Session ID: 1H07
Published: 2004
Released on J-STAGE: March 23, 2006
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Surface of commercial Silicon Nitride Powders will be disscuss.
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Toshiyuki Nishimura, Xin Xu, Naoto Hirosaki, Koji Kimoto, Yoshinobu Ya ...
Session ID: 1H08
Published: 2004
Released on J-STAGE: March 23, 2006
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Junichi Tatami, Ryouichi Nishimizu, Masaki Toyama, Katsutoshi Komeya, ...
Session ID: 1H09
Published: 2004
Released on J-STAGE: March 23, 2006
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Akio Matsumoto, Tatsuya Goto
Session ID: 1H10
Published: 2004
Released on J-STAGE: March 23, 2006
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RBSN(Reaction Bonded Silicon Nitride) is manufactured by reaction sintering of silicon powder by nitrogen. This process is useful industrially for two reasons. At first, cheap silicon powder can be utilized to compare with expensive silicon nitride powder. And secondly, shrinkage by sintering is almost zero. RBSN is porous material, so silicon infiltration had been tried to make it dense like RBSC(Reaction Bonded Silicon Carbide). But this trial had not been successful because wettability between silicon nitride and silicon is not so good. In this study, we succeeded in manufacturing silicon infiltrated RBSN by improvement of raw material formula and infiltration process. And we also attained prevention of silicon burst in cooling process, which is a general problem when manufacturing various silicon infiltrated composites.
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Thanakorn Wasanapiarnpong, Shigetaka Wada, Masamitsu Imai, Toyohiko Ya ...
Session ID: 1H11
Published: 2004
Released on J-STAGE: March 23, 2006
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The thermal conductivity of silicon nitride ceramics prepared with varying oxide sintering additive compositions was studies. The oxide sintering additives promote formation of liquid phase to enhance densification. After cooling down, liquid phase may be remains as a glassy or partially crystallized grain-boundary phase. The grain-boundary phase reduces thermal conductivity of Si
3N
4 ceramics due to lower thermal conductivity of oxides. An Y
2O
3-Al
2O
3 system is one of the most popular additives for densification of Si
3N
4 because low temperature for sintering and the resulted ceramics show excellent mechanical properties. But Al
2O
3 will promote to form SiAlON phase which has also low thermal conductivity. To improve the thermal conductivity of Si
3N
4 ceramics, eliminating of glassy phase by post-sintering heat treatment at difference nitrogen gas pressure at varying temperature was examined in this study. Y
2O
3- Al
2O
3, Y
2O
3-SiO
2, and Y
2O
3-MgO systems were used as additives for the sintering of silicon nitride ceramics. The SiO
2 and MgO have high vapor pressure which can be eliminated from the ceramics by the vaporization. Effects of heat treatment conditions on the microstructure, chemical composition, and thermal conductivity of silicon nitride ceramics were observed.
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Daisuke HIRATSUKA, Junichi TATAMI, Takeshi MEGURO, Katsutoshi KOMEYA, ...
Session ID: 1H12
Published: 2004
Released on J-STAGE: March 23, 2006
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b-SiAlON nano ceramics were fabricated by spark plasma sintering using the ultra fine powder synthesized through carbothermal reduction-nitrogen method, and its aqueous and gas corrosion resistance were evaluated. As a result of TEM observation,the devoloped b-SiAlON ceramics were composed of nano-sized grains and the glassy phase was hardly found at the grain boundary. It showed much higher aqueous corrosion resistance than commercialized Si3N4 ceramics. We also obtained valuable information of corrosion surface from SPM observation.Furthermore, the b-SiAlON nano ceramics possessed high corrosion resistance to air and air-SOXgas mixture at high temperature. It is considered excellent thermal and chemical durability of b-SiAlON but also very little glassy phase in their grain boundary.
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Hiroshi Watanabe, Junichi Tatami, Takeshi Meguro, Katsutoshi Komeya, M ...
Session ID: 1H13
Published: 2004
Released on J-STAGE: March 23, 2006
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Toshitaka Sakurai, Yoshinari Miyamoto
Session ID: 1H27
Published: 2004
Released on J-STAGE: March 23, 2006
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Tomohiro Yamakawa, Junichi Tatami, Takeshi Meguro, Katsutoshi Komeya
Session ID: 1H28
Published: 2004
Released on J-STAGE: March 23, 2006
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Takayuki Hirano, Makoto Imamura, Katsuyoshi Oh-ishi
Session ID: 1H29
Published: 2004
Released on J-STAGE: March 23, 2006
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Seiji Iwasawa, Juniti Tatami, Takeshi Meguro, Katutoshi Komeya
Session ID: 1H30
Published: 2004
Released on J-STAGE: March 23, 2006
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Ayako Kai, Hiroki Hirata, Toshikatsu Miki
Session ID: 1H31
Published: 2004
Released on J-STAGE: March 23, 2006
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Noriyuki Ishimura, Ayako Kai, Toshikatu Miki
Session ID: 1H32
Published: 2004
Released on J-STAGE: March 23, 2006
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Takafumi Kusunose, Tohru Sekino, Tadachika Nakayama, Koichi Niihara
Session ID: 1H33
Published: 2004
Released on J-STAGE: March 23, 2006
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Usually, in the system of AlN with Y
2O
3 additive, first of all, yttrium aluminate is produced as a grain boundary phase. And, by further heat treatment in nitrogen-reducing atmosphere, it is found that yttrium aluminate at grain boundary is transformed into YN from the surface. As a result, fortunately, we found AlN containing YN as a grain boundary phase showed electrical conductivity. The purpose of this study is to fabricate electrically conductive AlN ceramics with high thermal conductivity, and to control the electrical conductivity by addition of a small amount of CeO
2, which is easily reduced compared with Y
2O
3.
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Hirotaka Fujimori, Yoji Tamura, Akira Harita, Koji Ioku, Masato Kakiha ...
Session ID: 1H34
Published: 2004
Released on J-STAGE: March 23, 2006
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A micro-Raman spectroscopic investigation has been performed to observe structural disorder in each grain of aluminum nitride ceramics as semiconductor equipment parts. A selective thermal oxidation treatment normalizes a different rate of a corrosion reaction depending on a crystal face and improves consequently the corrosion resistance. With thermal oxidation treatment, line widths of Raman bands more increased in grains including mainly crystals with (100) preferred orientation than in those of (002), indicating that (100) faces oxidize preferentially rather than (002) faces. According to Raman shift from the oxidized sample, oxidation induces residual compressive stress for grains including a large number of (100) prefer-oriented crystals. On fluorination of the oxidized sample, an increase of line widths was not observed in both kinds of grains, suggesting that prior anisotropic thermal oxidation treatment of (100) faces, which is more sensitive to corrosion than (002) faces, inhibits the progress of a decay reaction.
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Ryuichi Shoji, Yukinori Nakamura, Yoshimasa Kondo, Naoto Ohtake
Session ID: 1H35
Published: 2004
Released on J-STAGE: March 23, 2006
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noriyasu hotta, kenta hashimoto, kunihiro yanagita, reki yonezawa, ken ...
Session ID: 1H36
Published: 2004
Released on J-STAGE: March 23, 2006
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Chiharu Sekiya, Kiyokata Iizumi, Shigeru Okada, Toetsu Shishido, Kunio ...
Session ID: 1H37
Published: 2004
Released on J-STAGE: March 23, 2006
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Shigeru OKada, Yuki Yamazaki, Kiyokata Iizumi, Toetsu Shishido, Kunio ...
Session ID: 1H38
Published: 2004
Released on J-STAGE: March 23, 2006
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Boron-rich compounds consisting of B12 icosahedra are of potential interest for applications to their remarkable physical and chemical properties, which in many cases are of potential interest for applications to thermoelectric and photodetectors. However, there is very little information about the physicochemical and mechanical properties of aluminum magnesium higher borides. Crystals of AlMgB22 are obtained by adding relatively little amount of Mg metal. But, owing to the high vapour pressure of Mg at high temperature, optimum conditions for growing AlMgB22 crystals are not established. In this paper, we report the optimum experimental conditions for growing relatively large crystals of AlMgB22 from Mg compounds (MgO2, MgC2O4, Mg(OH)2, Mg(CH3COO)2, MgF2, MgI2 other) and crystalline boron powders as the starting materials using and Al self-flux under an argon atmosphere. The size, morphology crystallographic data of the crystals were determined. Oxidation resistance in air up to 1473K, Vickers microhardness and magnetic susceptibility measurements at low temperatures of AlMgB22 crystals were studied.
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Jun-ichi Inagaki, Nao Sasaki, Kazuyuki Kakegawa
Session ID: 1H39
Published: 2004
Released on J-STAGE: March 23, 2006
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shinnosuke kawaguchi, kouichi takayama, shigeo ohshio, hidetoshi saito ...
Session ID: 1I06
Published: 2004
Released on J-STAGE: March 23, 2006
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To be high purity is often required for the oxide films deposited by the chemical vapor deposition technique due to effect of residual impurity on the morphology and crystalinity of the films. This study reveals that desorpted species from the oxide film sample measured using thermal desorption spectroscopy under high vacuum conditions. The molecules H
2,H
2O,N
2 and CO
2 were detected at high temperature.The relationship between residual species and microstructure in the film will be discussed.
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Hidetoshi Saitoh, Dieudonne Epassaka, Noriko Ito, Kei-ichi Namiki, Shi ...
Session ID: 1I07
Published: 2004
Released on J-STAGE: March 23, 2006
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The amorphous alumna films deposited by the chemical-vapor depositionmethod were annealed at 600 ゚C. After anneal treatment, microcracking was recognized on the surface of the films. The microcracking occurred at 300 ゚C. In addition, desorption of water was observed at 300 ゚C and higher. The microcraking occurs by the volume reduction of the film with desorption of water.
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Hidetoshi Saitoh, Dieudonne Epassaka, Noriko Ito, Kei-ichi Namiki, Shi ...
Session ID: 1I08
Published: 2004
Released on J-STAGE: March 23, 2006
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The amorphous alumna films deposited by the chemical-vapor deposition method produces microcracking on the surface at 300 ゚C. To avoid formation of microcracking, molecular design of starting materials was conducted. Optimum starting material avoids microcracking of the films during the annealing treatment. No desorption of water was observed on crack-free film.
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SeungChul Oh, SeWoong Oh, Wataru Minami, LaeHyun Kim, HeeJoon Kim
Session ID: 1I09
Published: 2004
Released on J-STAGE: March 23, 2006
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Masahiro Takashima, SeWoong Oh, Hiroyuki Mutou, Wataru Minami, HeeJoon ...
Session ID: 1I10
Published: 2004
Released on J-STAGE: March 23, 2006
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TAKAAKI NAGAOKA, TAKAHISA TSUGOSHI, YUJI HOTTA, MASAKI YASUOKA, KOJI W ...
Session ID: 1I11
Published: 2004
Released on J-STAGE: March 23, 2006
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Yu-ichi Yoshizawa, Kiyoshi Hirao, Yukihiko Yamauchi, Shuzo Kanzaki
Session ID: 1I12
Published: 2004
Released on J-STAGE: March 23, 2006
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Kazuyoshi Sato, Satoshi Tanaka, Nozomu Uchida, Keizo Uematsu
Session ID: 1I13
Published: 2004
Released on J-STAGE: March 23, 2006
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Shintaro Yonetani, Kazuyoshi Sato, Satoshi Tanaka, Nozomu Uchida, Keiz ...
Session ID: 1I14
Published: 2004
Released on J-STAGE: March 23, 2006
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Masato Shida, Katsunori Akiyama, Ichiro Nagano, Yuichiro Murakami, Sat ...
Session ID: 1I27
Published: 2004
Released on J-STAGE: March 23, 2006
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Norio Yamaguchi, Kunihiko Wada, Takeharu Kato, Hideaki Matsubara
Session ID: 1I28
Published: 2004
Released on J-STAGE: March 23, 2006
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Hideaki Matsubara, Mineaki Matsumoto, Norio Yamaguchi, Takeharu Kato
Session ID: 1I29
Published: 2004
Released on J-STAGE: March 23, 2006
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Byung-Koog Jang, Norio Yamaguchi, Hideaki Matsubara
Session ID: 1I30
Published: 2004
Released on J-STAGE: March 23, 2006
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Electron beam-physical vapor deposition (EB-PVD) is a widely used technique for depositing thermal barrier coatings (TBCs) on metal substrates for high temperature applications, such as gas turbines, in order to improve thermal efficiency. As particularly, it is necessary to evaluate how the thermal conductivity of yttria-stabilized zirconia (YSZ) coatings is affected by processing conditions during EB-PVD. In this work, we calculated the thermal conductivity of YSZ coating layers deposited on dense YSZ substrates based on theory. This work also addresses the influence of processing conditions (especially substrate rotation speed) on microstructure during EB-PVD and its influence on the thermal conductivity of zirconia coating layers.
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Eiki Niwa, Takaaki Ichikawa, Takuya Hashimoto, Kohji Takahashi, Yuko M ...
Session ID: 1I31
Published: 2004
Released on J-STAGE: March 23, 2006
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Tomoko Suzuki, Atsushi Omote, Masa-aki Suzuki
Session ID: 1I32
Published: 2004
Released on J-STAGE: March 23, 2006
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Masahiro Murata, Mamoru Mizutani, Toshitaka Ota, Keiji Daimon, Yasuo H ...
Session ID: 1I33
Published: 2004
Released on J-STAGE: March 23, 2006
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sachiko tamai, ikuo yanase, hidehiko kobayashi
Session ID: 1I34
Published: 2004
Released on J-STAGE: March 23, 2006
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Sawao Honda, Hiroaki Tanaka, Kazuya Sumita, Tadahiro Nishikawa, Hideo ...
Session ID: 1I35
Published: 2004
Released on J-STAGE: March 23, 2006
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Takashi Akatsu, Hiroaki Takashima, Kouhei Kubota, Satoshi Kobayashi, S ...
Session ID: 1I36
Published: 2004
Released on J-STAGE: March 23, 2006
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Atsushi Hatakeyama, Yasunori Okamoto
Session ID: 1I37
Published: 2004
Released on J-STAGE: March 23, 2006
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KAZUAKI HASHIMOTO, KATSUMI YOSHIDA, YOSHITOMO TODA, SHIGEKAZU UDAGAWA, ...
Session ID: 1J06
Published: 2004
Released on J-STAGE: March 23, 2006
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Kunio Ishikawa, Shigeki Matsuya, Xin Lin, Koh-ichi Udoh, Masaharu Naka ...
Session ID: 1J07
Published: 2004
Released on J-STAGE: March 23, 2006
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Yu Sogo, Daiki Yokoyama, Atsushi Yamazaki, Atsuo Ito
Session ID: 1J08
Published: 2004
Released on J-STAGE: March 23, 2006
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Norio Yamaguchi, Tadashi Morikawa, Osamu Ohashi
Session ID: 1J09
Published: 2004
Released on J-STAGE: March 23, 2006
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