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Hartmut Sklebitz
Article type: Article
Pages
517-520
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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In X-ray TV systems efficient coupling of the X-ray scintillator screen and the image sensor is required to avoid increased quantum noise and to maintain a high signal to noise ratio at low X-ray dose rates. Backscattered light of the image sensor returning to the image source can degrade contrast and sharpness. An overview of the importance of the pick-up device parameters for the X-ray TV is presented.
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Yutaka Tsuchiya
Article type: Article
Pages
521-524
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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Recent ultra-low-light-level imaging and measuring technologies are discussed including their application to physics, life science, materials, and so on, focusing on the research and development at Hamamatsu Photonics.
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Henri Rougeot
Article type: Article
Pages
525-529
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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RICHARD J. STUMPF
Article type: Article
Pages
531-534
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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Yuichi Ninomiya
Article type: Article
Pages
535-538
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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An Hi-Vision still picture system is one of the most useful picture sources not only for broadcasting but also for many non-broadcasting applications. A guideline for standards of Hi-Vision still picture system has been established. We desire that all Hi-Vision still picture signal will meet the standards and these signals keep mutual compatibility.
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Laurence J. Thorpe
Article type: Article
Pages
539-542
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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There are multiple dimensions to the quality of a television or film image. The evolution of the television imager is a saga of separate technological struggles with each. 1992 sees the dawn of a new era with the HDTV CCD imager finally thrusting electronic real time imaging to a total performance level compatible with that of contemporary 35mm motion picture film.
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P.Thomas Jenkins, Savvas G. Chamberlain
Article type: Article
Pages
543-547
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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Recently the capture of images at speeds far above standard television video rates has been achieved through the use of novel architecture and device designs using CCD image sensors. This paper reviews CCD based image sensors for ultra high speed cameras. Experimental result of several architectural approaches are discussed including a 117,000 frames per second parallel output CCD image sensor array. These devices demonstrate the quality of operation of the CCD registers and the amplifiers at speeds in excess of 15MHz per channel. The camera implementations of these devices are also discussed. Finally, we demonstrate the successful integration of multi-channel devices for image capture.
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Nobukazu Teranishi
Article type: Article
Pages
549-552
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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Kenkichi Tanioka, Tadaaki Hirai
Article type: Article
Pages
553-556
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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The phenomenon of stable avalanche multiplication in an amorphous selenium photoconductive target was found to occur in a large target electric field of more than 0.8×10^8V/m. For the purpose of obtaining an ultra-high sensitive camera tube with excellent picture quality, this phenomenon was exploited in an 18mm camera tube. The camera tube, called Super-HARP, has a sensitivity about 100 times as great as a conventional camera tube.
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Timothy J. Trendwell, Kenneth A. Parulski, Larry J. McMillan
Article type: Article
Pages
557-558
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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Electronic photography is evolving from systems based on analog video technology to systems based on digital computer technology. In this paper, directions for image sensors and signal processing for digital electronic photography are outlined. In addition, issues related to worldwide standards for digital cameras are discussed.
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Yasuo Inoue, Tadashi Nishimura
Article type: Article
Pages
559-562
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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Possibility of intelligent image processors with multi-layer structure (3-D image processor) was taken into consideration. Applicable fields of the 3-D image processors were the field in which information extracted from images is utilized. Some of the 3-D image processors proposed in recent yeas were introduced and advantages of the operation speed due to the parallel-fashioned method were considered.
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Hammam Elabd
Article type: Article
Pages
563-566
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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Several high resolution EO image sensor devices have been developed for film, document scanning, and medical applications. Line arrays 1×6000,1×12000,area arrays with 1 to 4 Mega pixel resolutions and custom X ray sensors. These sensors are presently integrated in various document, graphics and medical imaging systems and represent the basic building blocks of the totally filmless imaging world of the future.
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Kazufumi Yamaguchi, Tatsuo Okamoto, [in Japanese], Katsusige Yamashita ...
Article type: Article
Pages
567-570
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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A new contact type image sensor chip has been developed, which integrates a phototransistor and a planar thyristor shift register using a simple bipolar IC process. The combination of the simple IC process and the shift register makes it possible to realize a high performance and low cost sensor chip. A B4 size contact type image sensor using the sensor chips and a reading unit have achieved excellent performance in which S/N ratio is over 40dB at a exposure of 0.05 lx.s.
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Jaroslav Hynecek
Article type: Article
Pages
571-574
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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The low sensitivity of the small pixel image sensors and the undesirable effects of the high noise floor of the existing charge detection amplifiers are both improved by inserting a low noise Charge Carrier Multiplier (CCM) into the CCD Charge transferring path. Furthermore, the signal-to-noise ratio is improved by increasing the photocell Quantum Efficiency (QE) using the new design architecture. In the new photocells only a small portion of the active pixel area is sacrificed for the vertical charge transfer channels which utilize a resistive gate CCD. The vertical channels also serve as lateral drains for blooming control which further improves QE. The proposed new image sensor incorporating the CCM structure and the narrow resistive gate vertical charge transfer channels is called the Charge Super Sweep Device (CSSD).
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Article type: Cover
Pages
Cover2-
Published: July 28, 1992
Released on J-STAGE: October 02, 2017
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