IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band
Yasser MafinejadMajid ZarghamiAbbas Z. KouzaniKhalil Mafinezhad
Author information

2013 Volume 10 Issue 24 Pages 20130746


This paper presents a wide band RF MEMS capacitive switch. The LC resonant frequency is reduced from mm wave to X band frequencies at down-state by using a meander type membrane, with the frequency band is being increased by adding two short high impedance lines at both ends of coplanar waveguide (CPW). Moreover, this acts as T-match circuit in up-state position and improves the matching. Simulation results demonstrate that the capacitance ratio reduces from 50 to 21.4, S21 and S11 are less than −10dB for the entire frequency band at down-state and up-state. Also, a comprehensive and complete electric model of the switch is proposed and simulation results agree well with the characteristics of the physical structure of the MEMS switch. Vpull-in and Vpull-out of this switch are 8.1V and 0.3V, respectively.

Information related to the author
© 2013 by The Institute of Electronics, Information and Communication Engineers
Previous article Next article