抄録
The characteristics of the Random Telegraph Noise (RTN) in Gate-Induced Drain Leakage (GIDL) current are first investigated. Based on the Hurkx model, a new model is developed for the Trap-Assisted-Tunneling (TAT) and Band-to-Band Tunneling (BBT) regimes in Saddle Metal-Oxide-Semiconductor Field-Effect Transistor (Saddle MOSFET) for DRAM applications. The three-dimensional Technology-based Computer Aided Design (TCAD) simulator is used to quantitatively analyze and model the RTN. The RTN amplitude in GIDL current (i.e., ΔI/I) increases with increasing drain-to-gate voltage (VDG) in the TAT regime, whereas ΔI/I decreases with increasing VDG in the BBT regime. Simulation results are well matched to the results estimated by the newly-proposed equations derived from the Hurkx model. This model would open a new pathway for the RTN analysis in DRAM devices.
