Impacts of flexible V_th control, low process variability, and steep SS with low on-current of new structure transistors to ultra-low voltage designs

Abstract

This paper discusses impacts of flexible V_th control, low process variability, and steep SS with small on-current of new structure devices on ultra-low voltage circuits. Our simulation results based on PTM 22 nm model clarify applicability of ultra-low voltage operation to a nominal speed common SoC designs by an introduction of V_th control as well as low power sensor nodes. We also reveal requirement of process variability suppression for high energy efficiency with steep SS transistors, and utilization of small on-current steep SS transistors to low power and low speed applications. Our qualitative discussion well explains these experiment results.