抄録
Semiconductor light emitting device with a high-power output and a broadband spectrum characteristic is valid as the light source for the optical sensing system. However, a high-power and a broadband spectrum characteristic are in the relation of the trade-off. We have successfully fabricated a broadband emitting diode by multiplying emission areas. This device has the performance of 1.4 times of spectrum width compared with the conventional identical output device. This result shows the device performance exceeds the conventional trade-off.
