電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
研究開発レター
加工条件の異なる(110)<110>単結晶シリコン薄膜の引張試験
上杉 晃生平井 義和菅野 公二土屋 智由田畑 修
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2012 年 132 巻 9 号 p. 320-321

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We conducted uni-axial tensile test using electrostatic-force grip on thin film single crystal silicon of <110> direction. The specimens were fabricated on (110) SOI wafer (length: 120µm, width: 5µm, thickness: 5µm) and went through 3 different conditions of patterning process composed of Bosch process and wet etching process for surface residue removal. As a result, improvement of surface morphology brought increase of average tensile strength from 1.9GPa to 3.6GPa. SEM observation of fractured specimens suggests that, regardless of processing conditions, relationship between tensile strength and the top-view length of (110) crystal plane of specimens can be expressed with a common equation.

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© 2012 電気学会
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