ピニングサイトを施した磁性細線における磁壁のパルス電流駆動シミュレーション

抄録

Race track memory recently proposed as a future data storage technology is a solid state shift register type memory, where a nano scale domain wall (DW) is utilized as a bit information carrier and propagates along the magnetic strip with spin polarized currents. Artificial DW pinning along the magnetic strips and well controlled propagation between the neighboring pinning sites are fundamental memory operations. In the present study material modulation along the magnetic strip is proposed as a novel DW pinning site and the successful operations are demonstrated by micromagnetic simulations.