抄録
Sintered reaction-bonded silicon nitride (SRBSN) materials were prepared from a high purity Si powder doped with yttria and magnesia as sintering additives by nitriding and subsequently post-sintering. Microstructure, phase composition, four-point bending strength and thermal conductivity at room temperature of the sintered materials were characterized. The materials attained thermal conductivities of 100 - 133 W/(mK) and four-point bending strength of 516 - 843 MPa. This study indicates that the SRBSN route is a promising way of fabricating silicon nitride materials with high thermal conductivity and high strength.
