SPring-8/SACLA利用研究成果集
Online ISSN : 2187-6886
Section A
Understanding Epitaxial Growth of Phase-Change Materials through Studies of the Local Structure
R. CalarcoA. V. KolobovP. FonsA. GiussaniP. RodenbachK. PerumalM. Krbal
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キーワード: GST, XANES, MBE, 2011B1519, BL01B1
ジャーナル オープンアクセス

2015 年 3 巻 1 号 p. 10-13

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Ge2Sb2Te5 (GST) thin films were grown epitaxially on (001)- and (111)-oriented substrates with control of the growth surface temperature obtained by in-situ quadrupole mass spectrometry (QMS). X-ray absorption near edge spectra (XANES) obtained on samples prepared on different substrate orientations and with different surface temperature were compared. The results show that the Ge2Sb2Te5 layers grown on (111) surfaces show a more pronounced rhombohedral distortion as compared to layers grown on (001)-oriented surfaces.

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