The growth kinetics of intermetallic compounds formed on the boundary between Au and In-48Sn solder was researched with diffusion couples. On heating under the melting point of In-48Sn solder, the AuIn
2 layer was firstly formed on the boundary and grew toward the solder layer. Simultaneously, the γ layer was formed on the boundary between AuIn
2 layer and solder layer. On the other hand, the AnIn
2 layer, which was firstly formed, finally changed to the intermetallic compounds of Au-Sn system in heating over the melting point of that solder. That reaction was possible to be explained by the diffusion path described in the Au-In-Sn phase diagram. As the result of the Arrhenius plot for the growth rate constant, the activation energy of the growth of AuIn
2 was estimated at 42.8kJ/mol.
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