抄録
The Si-MCP with a high aspect ratio produced by the wet or dry etching technique of Si for micro channel formation and the CVD method for secondary electron multiplying film growth have been developed. The micro channel formed on the (110) Si substrate by anisotropic wet etching is a slit structure. On the other hand, the micro channe1 formed by using Deep-RIE is not only a pipe structure but also inclines. The CVD lead glass and the poly-Si film have been introduced as a secondary electron multiplying film. The gain of 54 was obtained at a dynode voltage of 600 V by the slit type Si-MCP with CVD lead glass, which had the maximum secondary electron emission coefficient of 1.9 at 190 eV.
