電気学会論文誌E(センサ・マイクロマシン部門誌)
Online ISSN : 1347-5525
Print ISSN : 1341-8939
ISSN-L : 1341-8939
129 巻, 12 号
選択された号の論文の13件中1~13を表示しています
特集:集積化センシングシステム
特集論文
  • 吉原 晋二, 大原 淳士, 安部 克則, 竹内 幸裕, 川原 伸章
    2009 年 129 巻 12 号 p. 433-438
    発行日: 2009/12/01
    公開日: 2009/12/01
    ジャーナル フリー
    We report that an ultra-small laser scanning module of millimeter size was realized. This laser scanning module consists of silicon substrate, a laser diode array with multi-emitter, and microprisms. The microprism measures 180μm wide, 100μm high, and 80μm thick. The smaller the optical elements used, the more precise the alignment accuracy required. The microprisms and alignment pins for laser diode array are fabricated on the same silicon substrate using MEMS technology. Then the laser diode array is attached to the silicon substrate by setting with the alignment pins. The alignment accuracy was ±2.8μm for the interval between the laser diode array and microprisms. The rotational angle accuracy of each axis was within ±0.3 degrees. This high alignment accuracy has been achieved without camera.
  • 板坂 洋佑, 西澤 松彦, 安部 隆
    2009 年 129 巻 12 号 p. 439-443
    発行日: 2009/12/01
    公開日: 2009/12/01
    ジャーナル フリー
    This paper reports integration of quartz-crystal microbalance (QCM) sensors on a monolithic quartz crystal plate without using microfabrication. The QCM sensor used for this study is specially developed for sensing within a microfluidic channel. In this study, the distance between QCMs was optimized by monitoring frequency change caused by a mass load onto a neighboring QCM. It was found that circular shape QCM is suitable for the integration. The optimized QCM array was used for monitoring an etching of a gold electrode of the QCM by electrochemically generated oxidant. The measured phenomenon is practically useful for the cleaning of an integrated sensor within a packaged microfluidic channel.
  • 高嶋 徳明, 木村 光照
    2009 年 129 巻 12 号 p. 444-449
    発行日: 2009/12/01
    公開日: 2009/12/01
    ジャーナル フリー
    We have extended measurable pressure range of the thin film Pirani vacuum sensor that is still sensitive above 1×105 Pa (1 atmosphere). In our thin film Pirani vacuum sensor, our proposed temperature difference sensor of the short circuit Seebeck-current detection type thermocouple is used in order to get extremely high sensitivity, especially both in very low pressure range and in higher pressure range than 1×104 Pa. In our new pressure sensor the cantilever type sensing region, in which a microheater and two thermocouples are formed to measure the temperature difference, is adopted. Therefore, we can use the null method to measure very small pressure accurately in the high vacuum range (low pressure range). On the other hand in the higher pressure than 1×104 Pa., we could expand the pressure range by adoption of the vibration of the sensing cantilever based on the sudden heating due to the exchange of heater driving. We have achieved much wider measurable pressure range over 8 digits by use of our new simple thin film Pirani vacuum sensor than that of the traditional one.
  • 室山 真徳, 巻幡 光俊, 松崎 栄, 山田 整, 山口 宇唯, 中山 貴裕, 野々村 裕, 田中 秀治, 江刺 正喜
    2009 年 129 巻 12 号 p. 450-460
    発行日: 2009/12/01
    公開日: 2009/12/01
    ジャーナル フリー
    This paper proposes a novel tactile sensor system, which acquires sensing data by interrupt data transmission from each tactile sensor element. The interrupt makes decentralized sensing data transmission. Compared with existing centralized tactile sensor systems, the system can handle a large amount of tactile sensor elements and attach the elements on the arbitrary surface of the robot, because decentralized serial bus communication and the integration of a MEMS sensor and a signal processing LSI realize low power consumption, high speed response and flexible network morphology. In this paper, we focus on system analysis and LSI design for the system. Experimental results show that response time and power consumption of a tactile sensor element, which is composed of a MEMS capacitive force sensor and a signal processing LSI, are 21μs and 2mW, respectively. The computational experiments proved that more than thousands of the elements can be mounted in the system.
  • 佐久間 啓史, 高橋 幸郎
    2009 年 129 巻 12 号 p. 461-468
    発行日: 2009/12/01
    公開日: 2009/12/01
    ジャーナル フリー
    The Si-MCP with a high aspect ratio produced by the wet or dry etching technique of Si for micro channel formation and the CVD method for secondary electron multiplying film growth have been developed. The micro channel formed on the (110) Si substrate by anisotropic wet etching is a slit structure. On the other hand, the micro channe1 formed by using Deep-RIE is not only a pipe structure but also inclines. The CVD lead glass and the poly-Si film have been introduced as a secondary electron multiplying film. The gain of 54 was obtained at a dynode voltage of 600 V by the slit type Si-MCP with CVD lead glass, which had the maximum secondary electron emission coefficient of 1.9 at 190 eV.
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