光導波路のパッシベーションのためのゾルゲルSiO2層表面の改善検討

抄録

For exploiting sol-gel SiO2 for waveguide device passivation, we have investigated the surface condition of sol-gel SiO2 on top of Si, and have confirmed that the main cause of anti-etching property was due to the formation of polymer layer after curing process with 500 ℃ of sol-gel SiO2. To improve the surface condition, plasma-ashing, in addition to 700 ℃ annealing, is proposed. Regular opening of SiO2 layer on Si with etching rate of 1.8 μm/min and sufficient electrical insulation (>10^13 Ω/m) toward proper current induced refractive index change have been successfully confirmed.