MEMS Rogowski Coil Current Sensor with TSV Structural Wiring

Abstract

We have fabricated an MEMS Rogowski coil current sensor with TSV structural wiring for overcurrent detection in power devices (device size: 10 × 10 × 0.3 mm³). The device is composed of a Rogowski coil consisting of a TSV structure current terminal with multi-TSV (11 × 11) for conducting current up and down the device, and a TSV structure wiring for detecting the current flowing through the current terminal. This device has a 137 turn spiral current sensing coil (via diameter: 100 μm). When the TSV current terminal was energized with a device using a high resistivity silicon substrate (>10,000 Ωcm), stable current detection was achieved.