In-circuit testing using a flying probe tester is an innovative testing technology that addresses the limitations of conventional bed-of-nails fixtures, including high design workload, significant running costs, and difficulties in accessing fine-pitch components and high-density traces. By using ultra-high-speed probes that can contact any point on a printed circuit board assembly (PCBA) with micron-level precision, it establishes a new testing standard for high-density PCBAs that are difficult to test using traditional approaches.

The latest model integrates support for JTAG (Joint Test Action Group) testing and incorporates ZERO Impact technology, positioning it as a next-generation standard in PCBA testing.

With recent developments in 3D semiconductor packaging technology, defects have become even more difficult to detect using conventional X-ray transmission inspection. This is due to the increasing complexity of microstructures and stacked junctions. This paper introduces the technical features of the VT-X950 automatic CT-type X-ray inspection system developed by the company to address these issues: the VT-X950 combines unique technologies such as a high-resolution X-ray source, fine pixel FPD, high-speed control through continuous image capture and automatic recipe generation with AI assistance to realise 0.2 μm/pix, enabling high-resolution and high-speed CT inspections. This technology will contribute to quality assurance of semiconductor products, shortening development times and improving process yields, which will become increasingly important in the future.

This paper uses a sinusoidal wave with mixed differential mode and common mode components to determine the equivalent common mode voltage generated at the common mode termination on the load side of the components, namely Through, CMC1, and CMC2 (CMC: Common Mode Choke coil), through simulation and measurement.

The relationship to the mixed-mode S-parameters used as a recommended value for CMC was then examined.

Our results show that using the equivalent common mode voltage obtained from the input waveform with mixed modes allows for an evaluation that considers the phase difference between modes caused by the CMC's mixed-mode S-parameters. Therefore, we demonstrated that this can be utilized as one guideline among many parameters used for a performance comparison of CMCs.

In this study, we proposed a method for defining spatial coordinates and detecting them by combining distance measurement information from Ultra-wide band (UWB) simulating a 5th generation mobile communication base station, map information of structures, and information from geomagnetic, acceleration, and air pressure sensors. We demonstrated that the detection method is effective even in indoor environments with multiple floors, and demonstrated it using a small detection module. This shows that it is possible to obtain spatial coordinates even in indoor environments by using a 5G-compatible terminal equipped with these sensors.

We investigated an insulating treatment of single-wall carbon nanotubes (SWCNTs) and its effect on the performance of an ultra-lightweight radio wave absorber proposed for electromagnetic environment control in the next generation of air mobility. First, SWCNTs were insulated with different amounts of a silane coupling agent, and ultra-lightweight materials consisting of insulated SWCNTs were fabricated. The electromagnetic wave absorption performance of the fabricated materials was measured, and the results showed that adding more than 500 μL of agent per 0.05 g of SWCNTs resulted in sufficient insulation treatment. Next, an ultra-lightweight material containing 14 wt.% of sufficiently insulated SWCNTs was fabricated and evaluated. The result indicates that an absorption effect of over 30 dB is achieved at 12 GHz.

This study evaluated the impact of contact resistance on changes in the electronic characteristics of pentacene organic thin-film transistors (OTFTs) under a tensile bending load. The contact resistances at the interface between the electrode and semiconductor layer of the OTFTs were estimated by means of the transfer line method (TLM) using specimens with different channel lengths. In this evaluation, the load direction dependence (parallel or perpendicular to the current direction of the OTFTs) in the electronic characteristic changes induced by the bending load was also evaluated. The results demonstrated that, in all cases, both the contact resistance and the channel resistance increased due to the tensile bending load. In addition, it was found that the rate of increase in the contact resistance for the parallel load was greater than that for the perpendicular load. It was also observed that the channel resistance had a higher stress sensitivity to the tensile bending load than the contact resistance.