Journal of The Japan Institute of Electronics Packaging
Online ISSN : 1884-121X
Print ISSN : 1343-9677
ISSN-L : 1343-9677

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Impact of Contact Resistance on Electrical Characteristic Variations of Organic Thin Film Transistors Due to Bending Load and Its Load Direction Dependence
Shotaro InoueMasaaki Koganemaru Takeo MinariEri KitaguchiToru Ikeda
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JOURNAL RESTRICTED ACCESS Advance online publication

Article ID: JIEP-D-25-00007

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Abstract

This study evaluated the impact of contact resistance on changes in the electronic characteristics of pentacene organic thin-film transistors (OTFTs) under a tensile bending load. The contact resistances at the interface between the electrode and semiconductor layer of the OTFTs were estimated by means of the transfer line method (TLM) using specimens with different channel lengths. In this evaluation, the load direction dependence (parallel or perpendicular to the current direction of the OTFTs) in the electronic characteristic changes induced by the bending load was also evaluated. The results demonstrated that, in all cases, both the contact resistance and the channel resistance increased due to the tensile bending load. In addition, it was found that the rate of increase in the contact resistance for the parallel load was greater than that for the perpendicular load. It was also observed that the channel resistance had a higher stress sensitivity to the tensile bending load than the contact resistance.

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