Abstract
The examination of the STO (SrTiO3) film capacitor process technology, which should be applicable to a resin-molded high frequency MCM, and the evaluation of high frequency characteristic of the capacitor fabricated using this technology have been carried out. The following results were obtained : (1) By the resin hardening treatment in vacuum and the coating a 200-nm-thick Pd or Al film on the Cu substrate, adhesion force between Cu substrate and the molded-resin became as about six times as that without coating on the Cu substrate, leading to the prevention of resin peeling from the Cu substrate. (2) 200-nm-thick STO film capacitors were formed on a resin multiple-layer film and showed the flat frequency performance up to 3GHz, the relative dielectric constant of 35 and the capacitor density of 1400 pF/mm2. (3) It was clarified that the improvement of the STO film and the decrease of parasitic inductance are indispensable to the characteristic improvement of the STO film capacitor. The characteristic of the STO film should be going to be improved in terms of the MCM total process.
