Electrochemistry
Online ISSN : 2186-2451
Print ISSN : 1344-3542
ISSN-L : 1344-3542
Search
Advanced search
OR
Browse
Search
Volume 78, Issue 3
Displaying 1-14 of 14 articles from this issue
Show all abstracts
    • |<
    • <
    • 1
    • >
    • >|
Preface
Communication
  • Electrochemical Behavior of Gradient Polished Surface of Hot Dipped Al–Si Coated Steel
    Chaiyaput KRUEHONG, Gamal. A. EL-MAHDY, Atsushi NISHIKATA, Tooru TSURU
    2010 Volume 78 Issue 3 Pages 188-190
    Published: March 05, 2010
    Released on J-STAGE: March 26, 2012
    DOIhttps://doi.org/10.5796/electrochemistry.78.188
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    A novel method for coating surface polishing has been applied for a systematic study of the localized individual coating regions of the Al–Si coated steel. Polarization, EPMA and corrosion potential measurements have been applied for determination the ability of each region for protection of underlying steel. The susceptibility of the Si rich region, interface region and Fe-rich region to pitting corrosion decreases in the following order: Si-rich region>Fe-rich region>interface region. The elemental distribution of Si and Fe plays an important role in the corrosion behavior of coating film and influences its susceptibility to pitting process.
    View full abstract
    Download PDF (1004K)
Note
  • OFET Characteristics of Stretched Poly(3-hexylthiophene) Films
    Yoshihito KUNUGI, Yuki YAMADA, Hiroaki HORIUCHI, Hiroshi HIRATSUKA, Jo ...
    2010 Volume 78 Issue 3 Pages 191-193
    Published: March 05, 2010
    Released on J-STAGE: March 26, 2012
    DOIhttps://doi.org/10.5796/electrochemistry.78.191
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    We investigated the field-effect characteristics of mechanically stretched regio-regular poly(3-hexylthiophene) (P3HT) on a supporting poly(vinyl alcohol) (PVA) film. After stretching the P3HT/PVA film, large dichroism was observed in the polarized UV-Vis absorption spectra. The stretched P3HT films were applied parallel or orthogonal to the conduction channel of the transistor. The field-effect mobility was highly anisotropic, with larger mobility along the stretched direction of the films. The mobility increased with increasing stretch ratio (Sr) for the parallel devices but decreased for the orthogonal devices.
    View full abstract
    Download PDF (985K)
Topic
 
 
Salon
 
    • |<
    • <
    • 1
    • >
    • >|
feedback
 Top