Chemical mechanical polishing (CMP) is widely used for finishing silicon wafers, which require high flatness and surface roughness. However, the details of the removal process are still unclear. In this study, a method to simulate the chemical and mechanical effects of CMP using classical molecular dynamics is proposed. The proposed method controls potential parameters based on the distance from the wafer surface to the silicon atoms to represent wafer softening by the chemical effect. In this paper, simulations were performed under five different weakening conditions and the results were compared. By controlling the potential parameters, grinding force and strain were successfully controlled. Therefore, a basic model to simulate the CMP process was established.