We have developed vapor-deposited films of acenaphtho[1,2-
k] fluoranthene (AF) and their 7,14-dicarbalkoxy derivatives as active layers of organic field-effect transistors (OFETs). The AF- and 7,14-dicarbmethoxyacenaphtho[1,2-
k] fluoranthene (DMAF)-based OFET devices did not work sufficiently. On the other hand, the 7,14-carbethoxyacenaphtho[1,2-
k] fluoranthene (DEAF)-based OFET device showed typical
p-channel FET responses with a field-effect mobility of 1.7×10
−3 cm
2 V
−1 s
−1 and a current on/off ratio of about 10
2. According to the X-ray diffraction measurements, the carbethoxy groups could largely improve the molecular packing that is favorable for high-performance OFETs.
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