2009 Volume 12 Issue 6 Pages 511-518
The core resin film, electrode configuration and processing technology of a SrTiO3 (STO) thin-film capacitor, which is expected to be suitable for fabrication at reduced costs, were examined. The high-frequency characteristics of the capacitor fabricated using this processing technology were also investigated. The following results were obtained. (1) Fabrication of an STO thin-film capacitor on a polyimide or glass-epoxy film is possible. (2) A Ru/STO/Cr–Cu three-layer-film configuration is highly promising. (3) Batch processing of the pattern formation of the 300-nm-thick STO thin-film capacitor by all chemical-etching techniques is possible. In addition, it was confirmed that the STO thin-film capacitor has a flat-frequency response up to 10 GHz, a relative dielectric constant of 17 and a capacitor density of 500 pF/mm2.
