Abstract
The influence of the crystalline texture on the etching rate of copper was studied in a sulfuric acid/hydrogen peroxide etching solution using a scanning probe microscope (SPM), electron back scatter diffraction patterns (EBSD), and polarization techniques. The results clearly showed that the crystal faces oriented around the {101} and {111} faces etched at a slower rate than those oriented around the {001} face. The {001} oriented polycrystalline copper showed a relatively noble corrosion potential and depolarization of the cathodic partial reaction. It was suggested that the etching rate of polycrystalline copper is controlled by the mean value of the reduction rate of the hydrogen peroxide on each of the grain surfaces. The {001} face has the highest reduction rate of hydrogen peroxide on the grain. The addition of 1-propanol to the etching solution could reduce the difference for the etching rate of each crystal orientation.
