Abstract
As an approach for the damage and disconnection improvement of wiring patterns on a resin-molded high frequency MCM, we have developed the filler's diameter-shrank and uniformed novel resin. It's availability was investigated from both standpoints of MCM process and RF performances. It was revealed that the surface flatness of two kinds of resins for chip mold and interconnection were, respectively, achieved to be about 0.44μm and 0.25μm by the introduction of the resin containing Si-fillers with less than 10μm-diameter, leading to drastically improvement for the damage and disconnection of wiring patterns. Also, it was found that the developed resin can be simultaneously planed away together with Au bump and Cu electrodes. A power amplifier MCM with two Si-MOSFET for a cellular system were fabricated under the above investigations and the RF performances were estimated. In the MCM, the output power of 28.5 dBm and power efficiency of 40% were obtained at an operating frequency of 1.42GHz. From these results, it was confirmed that the developed resin is available for realizing GHz-band high frequency MCM.
