抄録
Ceramic substrates with buried capacitors were studied. Miss-matchings of sintering behaviors between substrate layer, capacitor layer and barrier. layer were canceled by adapting zero X-Y shrinkage sintering method. Newly developed barrier layer of MgO-ZnO-PbOCuO composition prevented a reaction between substrate layer and capacitor layer. Byusing these techniques, buried capacitance of 1μF/cm2have been developed.
