ロータリヘッドボンダによるバンプレスTAB技術の開発

抄録

Bumpless ILB (Inner Lead Bonding) technology is characterized by the use of ultrasonic bonding method to bond gold plated inner leads directly to the aluminum electrodes of semiconductor device without forming metallic bumps on the electrodes. This paper describes development of high speed bonding technology with bumpless semi-gang ILB method that allows multiple leads to be bonded simultaneously using single-point bounder. High productivity, low cost and short manufacturing cycle times are achieved by this method.