エレクトロニクス実装学会誌
Online ISSN : 1884-121X
Print ISSN : 1343-9677
2-Stepめっき法によるSn-Agはんだバンプ形成プロセス
宮田 雅弘江澤 弘和本間 荘一徳岡 剛井上 裕章吉岡 潤一郎辻村 学
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2002 年 5 巻 2 号 p. 180-184

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The eutectic Sn-3.5wt.%Ag solder alloy is expected to be one of the candidates for Pb-free solder bump materials. But it is difficult for the conventional Sn-Ag alloy plating method to obtain eutectic composition with good uniformity within wafer, and to control the composition of plating solution for long term product run. Therefore, we have developed the 2-step electro-plating bump process using separate plating reactors for Ag and Sn. The eutectic Sn-Ag alloy bumps were easily obtained by annealing the Ag/Sn metal stacks sequentially electroplated. It is easy to control the Sn-Ag alloy composition by changing the thickness ratio of Ag layer to Sn layer in an Ag/Sn metal stack. Furthermore, the 2-step electroplating bump process does not need to control the content ratio of Ag to Sn in a plating solution. The eutectic Sn-Ag solder bump process described here is confirmed to be easily applied to mass production.

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