Journal of The Japan Institute of Electronics Packaging
Online ISSN : 1884-121X
Print ISSN : 1343-9677
ISSN-L : 1343-9677
Termo-Viscoelastic Numerical Analysis of Residual Stress Influenced by Material Properties in Semiconductor Devices
Shozo NAKAMURAYoshiyuki KUSHIZAKIGen MURAKAMIMitsuo KIDO
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2002 Volume 5 Issue 4 Pages 379-384

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Abstract
Thermal residual stress and warp deformation behavior generates in a semiconductor device were analyzed, concerning with the material properties such as modulus, glass transition temperature and thermal expansion coefficient, using the numerical simulation method based on the thermo-viscoelastic analysis software we developed. In order to decrease the interfacial thermal residual stress between LSI chip and elastomer in a semiconductor device, it is efficient to use the elastomer of which properties are low modulus, high glass transition temperature and low thermal expansion coefficient.
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© The Japan Institute of Electronics Packaging
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