Abstract
We have developed a new technology for thinning optical devices for an opto-electronic interconnection module using an epitaxial lift-off (ELO) technique. The thinned optical devices were fabricated by a process of delaminating the GaAs substrate, selectively etching an AlGaAs release layer between the substrate and epitaxial layers with vertical cavity surface emitting lasers (VCSELs) . Before delaminating the substrate, we fabricated a deep hole in the substrate to enable light emission at a wavelength of 850 nm through the hole. The fabricated 10-μm-thick VCSELs were mounted and soldered at three electrode positions on the dummy glass substrate using AuSn bumping metal, and showed almost the same opto-electronic characteristics before and after ELO, as well as stable DC performance during continuous operation of up to 1000 hours.
