抄録
A new synthetic polymer of aromatic polyether (APE), having a narrow distribution of molecular weight, formed a specific self-assembly of Langmuir film (L film) on a water surface, which was subjected to surface pressure relaxation when the L film was compressed over 16.5 mN m-1 at 15°C. This self-assembly was capable of transferring on silicon-wafers as LB films. We found that, because the XRD patterns for fabricated LB films depended on the crystal face of the silicon-wafer used and moreover increased in diffraction intensity with the increasing number of built-up layers in the LB film, the present LB films showed a kind of epitaxy-like phenomenon. We propose the molecular mechanism explaining that the formation of an ionic supuramolecular structure of APE occurs only on a silicon wafer surface.
