1989 年 40 巻 6 号 p. 753-757
Ti-N films of various compositions (N/Ti ratios of 1.09∼0.41, oxygen contents of 0.8∼6.5 at%, and carbon contents of 5.7∼9.4 at%) were prepared by ion plating onto silicon wafers, and the residual stresses of the films were investigated. In TiN single-phase films, the compressive stress reached a maximum at an N/Ti ratio of 1.0, and decreased as the N/Ti ratio increased or decreased of 1.0. At N/Ti ratios lower than 0.8, compressive stress again began to increase as Ti2N phase was deposited in the TiN, but decreased as α-Ti phase appeared in the films. At an N/Ti ratio of 0.41, the film consisted of Ti2N and α-Ti, and the residual stress in the film was tensile. Compressive stress increased with increasing oxygen or carbon contents of the film.