A study was conducted on the outgassing behavior from Ti thin films deposited by ion plating and on H
2 adsorption on the clean or partially oxidized Ti film surface using thermal desorption spectroscopy (TDS). Desorption from the initial surface were mainly H
2 molecules, which were considered to be generated by the thermal decomposition of titanium hydride compounds on the surface. Relatively small amounts of H
2O, CO, and CO
2 desorption were also detected.
On the cleaned Ti film surface, adsorption of residual H
2 gas from the vacuum vessel was observed. Analysis of TDS spectra showed that the reaction order of desorption is second order and the activation energy of desorption was estimated to be 1.52eV. The amount of H
2 adsorption decreased as the O
2 dose increased, which indicating that gettering of H
2 occured only on the Ti metal surface and not on the oxide.
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