Nihon Kessho Gakkaishi

TiH₂ Ultrafine Particles Produced by the H₂ Gas Evaporation Technique

Shigeki YATSUYA

1987 Volume 29 Issue 5 Pages 311-318
Published: September 30, 1987
Released on J-STAGE: September 30, 2010

DOIhttps://doi.org/10.5940/jcrsj.29.311

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Ultrafine particles of TiH₂ are formed by the H₂ gas evaporation, the typical habit of which shows a dodecahedron. On the analysis of the habit, the growth of the particles is quite likely to be resulting from the martensitic transformation from the bcc structure to CaF₂ structure owing to the hydrogen absorption. The desorption of the H₂ from the TiH₂ particles by a heat treatment in a vacuum brings about the formation of hcp Ti particle, while the absorption of H₂ gas of Ti particles, in a hydrogen atmosphere, the formation of TiH₂ particles with CaF₂ structure. The formation of twins in a particle is always necessary for the transformations between TiH₂ and Ti.

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Control of Crystal Growth using an Excitation by Light Irradiation

Atsutoshi DOI, Souhachi IWAI, Yoshinobu AOYAGI, Susumu NAMBA

1987 Volume 29 Issue 5 Pages 319-325
Published: September 30, 1987
Released on J-STAGE: September 30, 2010

DOIhttps://doi.org/10.5940/jcrsj.29.319

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A growth model for atomic layer epitaxy (ALE) of GaAs by pulsed laser metal organic vapor phase epitaxy is reported. The physical processes of the model are surface reactions: the adsorption, desorption and decomposition of trimethylgallium (TMG) or triethylgallium (TEG) . These surface processes are expressed in terms of time constants Different decomposition time constants are assumed for TMG/TEG adsorbed on Ga and As terminated surfaces. It is found that an enhancement of the decomposition rate of TMG/TEG adsorbed on As compared to that on Ga terminated surfaces caused by laser irradiation is the main origin for the suspension of Ga deposition at 100% coverage.

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A New Fast Ion Conductor of K_xGa_16+xTi_16-xO₅₆ (x≤2)

Mamoru WATANABE

1987 Volume 29 Issue 5 Pages 326-334
Published: September 30, 1987
Released on J-STAGE: September 30, 2010

DOIhttps://doi.org/10.5940/jcrsj.29.326

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The compound is a new material which has an intergrowth structure of rutile and β-gallia. The structure contains one-dimensional large channels with 3.4 to 3.6Å free diameter. Potassium ions which are accommodated in the channels show one-dimensional ionic conduction. The ionic conductivity is dependent on frequency as well as temperature and, in microwave frequency range, reaches into about 5 S/cm even at ambient temperature. The value is much larger than the microwave ion conductivity of Naβ-Al₂O₃. In addition, this material seems to be superior in one-dimensional properties of ion transport to priderites with the hollandite-type structure.

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[title in Japanese]

[in Japanese]

1987 Volume 29 Issue 5 Pages 335-337
Published: September 30, 1987
Released on J-STAGE: September 30, 2010

DOIhttps://doi.org/10.5940/jcrsj.29.335

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[title in Japanese]

[in Japanese], [in Japanese], [in Japanese]

1987 Volume 29 Issue 5 Pages 338-340
Published: September 30, 1987
Released on J-STAGE: September 30, 2010

DOIhttps://doi.org/10.5940/jcrsj.29.338

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[title in Japanese]

[in Japanese], [in Japanese], [in Japanese], [in Japanese]

1987 Volume 29 Issue 5 Pages 341-342
Published: September 30, 1987
Released on J-STAGE: September 30, 2010

DOIhttps://doi.org/10.5940/jcrsj.29.341

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