Using a capacity bridge, a CR oscillator and an oscilloscope, we measured the capacity of the barrier layer of selenium rectifiers and studied the effect of the electric and the heat formations. It was found that the heat formation tend to diminish the capacity, while the electric formation has little effect on it.
From the relation between the capacity C and the bias voltage V,
C=√εeN/8π (V
D-V)
we obtained the diffusion potential V
D and the density of impurity centers N, which are given in Tables I and II.
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